Low-noise amplifier with narrow-band and wide-band input impedance matching design

被引：0
作者：
Huang, Zhe-Yang [1 ]
Chen, Chun-Chieh [2 ]
Hung, Chung-Chih [1 ]
机构：
[1] Natl Chiao Tung Univ, Elect & Comp Engn, Hsinchu 324, Taiwan
[2] Chung Yuan Christian Univ, Elect Engn, Chungli 320, Taiwan
来源：
JOURNAL OF THE CHINESE INSTITUTE OF ENGINEERS | 2015年 / 38卷 / 05期
关键词：
low-noise amplifier; LNA; impedance matching; ultra-wideband; CMOS LNA;
D O I：
10.1080/02533839.2015.1010452
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A low-noise amplifier (LNA) with cascode structure and shunt-peaking load is presented in this article. Both Narrow-band input impedance and wide-band input impedance LNAs were implemented in 0.18m CMOS process. Maximum power gain of the narrow-band input impedance LNA is 19.3dB; maximum power gain of the wide-band input impedance LNA is 15.3dB. Minimum noise figure of the narrow-band input impedance LNA is 3.1dB; minimum noise figure of the wide-band input impedance LNA is 3.0dB. Power consumptions including buffers are 24.5 and 25.6mW, respectively.
引用
收藏
页码：603 / 609
页数：7
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