Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors

被引：21

作者：

Trinh, Hai-Dang ^{[1
]}

Lin, Yueh-Chin ^{[1
]}

Wang, Huan-Chung ^{[1
]}

Chang, Chia-Hua ^{[1
]}

Kakushima, Kuniyuki ^{[2
]}

Iwai, Hiroshi ^{[2
]}

Kawanago, Takamasa ^{[2
]}

Lin, Yan-Gu ^{[1
]}

Chen, Chi-Ming ^{[1
]}

Wong, Yuen-Yee ^{[1
]}

Huang, Guan-Ning ^{[1
]}

Hudait, Mantu ^{[3
]}

Chang, Edward Yi ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Technol, Yokohama, Kanagawa 2268502, Japan

[3] Virginia Tech, Dept Elect & Comp Engn, Blacksburg, VA 24061 USA

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 02期

关键词：

ATOMIC-LAYER DEPOSITION; INAS; GAAS; DIELECTRICS; SUBSTRATE; VOLTAGE;

D O I：

10.1143/APEX.5.021104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of molecular-beam-deposited HfO2/n-InAs/InGaAs metal-oxide-semiconductor capacitors with different postdeposition annealing (PDA) temperatures (400-550 degrees C) are investigated. Results show that the sample with the PDA temperature of 500 degrees C exhibits the best capacitance-voltage (C-V) behavior with small frequency dispersion and small hysteresis. The X-ray photoelectron spectroscopy (XPS) spectra show the reduction of the amount of As-related oxides to below the XPS detection level when the PDA temperature is up to 500 degrees C. As the PDA temperature was increased to above 500 degrees C, As and In atoms seem to diffuse significantly into HfO2, resulting in the degradation of C-V behavior. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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