A modified simplified coherent potential approximation model of band gap energy of III-V ternary alloys

被引:8
作者
Zhao ChuanZhen [1 ,2 ]
Zhang Rong [1 ]
Liu Bin [1 ]
Fu DeYi [1 ]
Li Ming [1 ]
Xiu XiangQian [1 ]
Xie ZiLi [1 ]
Zheng YouDou [1 ]
机构
[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China
[2] Tianjin Polytech Univ, Sch Elect & Informat Engn, Tianjin 300160, Peoples R China
基金
中国国家自然科学基金;
关键词
band gap energy; coherent potential approximation; ternary alloys; CHEMICAL-VAPOR-DEPOSITION; COMPOUND SEMICONDUCTORS; SPECTROSCOPY; PARAMETERS; EDGE;
D O I
10.1007/s11433-012-4636-6
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Based on the modification of the simplified coherent potential approximation ( SCPA), a model is developed to calculate the composition dependence of the band gap energy of III-V ternary alloys with the same anion. The derived equation is used to fit the experimental band gap energy of InxAl1-xN, InxGa1-xN and AlxGa1-xN with x from 0 to 1. It is found that the fitting results are better than those done by using SCPA. The fitting results are also better than those obtained by using the formula with a small bowing coefficient, especially for InxAl1-xN. In addition, our model can also be used to describe the composition dependence of band gap energy of other III-V ternary alloys.
引用
收藏
页码:400 / 403
页数:4
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