Charge-carrier injection via semiconducting electrodes into semiconducting/electroluminescent polymers

被引:4
作者
Wünsch, F
Chazalviel, JN [1 ]
Ozanam, F
Sigaud, P
Stéphan, O
机构
[1] Ecole Polytech, CNRS, Lab Phys Mat Condensee, F-91128 Palaiseau, France
[2] Univ Grenoble 1, Spectrometrie Phys Lab, F-38402 St Martin Dheres, France
关键词
electrical transport measurements; interface states; surface electronic phenomena (work function; surface potential; surface states; etc.); silicon; semiconductor-insulator interfaces; contact;
D O I
10.1016/S0039-6028(01)01178-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The indium-tin-oxide (ITO) electrode commonly used for hole injection in organic electroluminescent devices is replaced by a crystalline p-type Si electrode in order to improve the injection efficiency, Several conducting/electroluminescent polymers such as poly(9-vinylcarbazole), poly(9,9-dihexylfluorene) and polyhexylcarbazole are deposited via spin-coating onto the Si electrode, and an Al contact is evaporated on top. Current-voltage characteristics indicate that hole injection into these polymers is easier from p-Si than from ITO or Au. Surface effects hinder an even better performance, expected from naive energetics considerations. This major role of the surface is demonstrated by comparing the average photoconductivity decay time at the Si/polymer-interface with that at an Si surface, using spatially resolved microwave reflection. Also, various surface treatments such as hydrogenation, oxidation and methylation are applied to the Si substrate before polymer deposition. The results highlight the key role of the interface state density at the semiconductor/polymer interface. and the need for a surface state density as low as possible in order to minimise the operating voltage. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:191 / 199
页数:9
相关论文
共 30 条
[1]   Degradation processes at the cathode/organic interface in organic light emitting devices with Mg:Ag cathodes [J].
Aziz, H ;
Popovic, Z ;
Tripp, CP ;
Hu, NX ;
Hor, AM ;
Xu, G .
APPLIED PHYSICS LETTERS, 1998, 72 (21) :2642-2644
[2]   CONJUGATED POLYMER LIGHT-EMITTING-DIODES ON SILICON SUBSTRATES [J].
BAIGENT, DR ;
MARKS, RN ;
GREENHAM, NC ;
FRIEND, RH ;
MORATTI, SC ;
HOLMES, AB .
APPLIED PHYSICS LETTERS, 1994, 65 (21) :2636-2638
[3]   THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J].
BARD, AJ ;
BOCARSLY, AB ;
FAN, FRF ;
WALTON, EG ;
WRIGHTON, MS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3671-3677
[4]   Stability of polymer light-emitting diodes [J].
Berntsen, AJM ;
Van de Weijer, P ;
Croonen, Y ;
Liedenbaum, CTHF ;
Vleggaar, JJM .
PHILIPS JOURNAL OF RESEARCH, 1998, 51 (04) :511-525
[5]  
Bliznyuk V, 1999, ADV MATER, V11, P1257, DOI 10.1002/(SICI)1521-4095(199910)11:15<1257::AID-ADMA1257>3.0.CO
[6]  
2-D
[7]  
Bulovic V, 1997, APPL PHYS LETT, V70, P2954, DOI 10.1063/1.119260
[8]   Electrode injection into conjugated polymers [J].
Bussac, MN ;
Michoud, D ;
Zuppiroli, L .
PHYSICAL REVIEW LETTERS, 1998, 81 (08) :1678-1681
[9]  
CHAZALVIEL JN, 1999, COULOMB SCREENING MO, P52
[10]   Enhanced brightness and efficiency in organic electroluminescent devices using SiO2 buffer layers [J].
Deng, ZB ;
Ding, XM ;
Lee, ST ;
Gambling, WA .
APPLIED PHYSICS LETTERS, 1999, 74 (15) :2227-2229