Short-range order in amorphous SiOx by x ray photoelectron spectroscopy

被引：23

作者：

Novikov, Yu N. ^{[1
]}

Gritsenko, V. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

SILICON OXYNITRIDE; THIN-FILMS; DEFECTS; PHOTOLUMINESCENCE;

D O I：

10.1063/1.3606422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Si 2p x ray photoelectron spectra of SiOx with a different composition of 0 <= x <= 2 have been studied experimentally and theoretically. The SiOx films were prepared by low-pressure chemical vapor deposition from SiH4 and N2O source at 750 degrees C. Neither random bonding nor random mixture models can adequately describe the structure of these compounds. The interpretation of the experimental results is discussed according to a large scale potential fluctuation due to the spatial variation of chemical composition in SiOx. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3606422]

引用

页数：4

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