Defects and gallium contamination during focused ion beam micro machining

被引:0
|
作者
Lehrer, C [1 ]
Frey, L [1 ]
Petersen, S [1 ]
Mizutani, M [1 ]
Takai, M [1 ]
Ryssel, H [1 ]
机构
[1] Fraunhofer Inst Integrierte Schaltungen Bauelemen, D-91058 Erlangen, Germany
来源
2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2000年
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Low energy focused ion beam (FIB) systems are used for the modification of integrated circuits, the preparation of TEM samples, the processing of structures in the sub - 100 nm range, and for failure analysis. Focused gallium ion beams with diameters down to < 10 nm (Full Width at Half Maximum) allow high resolution secondary electron surface inspection as well as local removal and deposition of material with high accuracy by physical sputtering or ion induced chemistry. Besides beam diameter and shape, gallium implantation and defect generation limit the application of FIB micro machining towards minimum resolution and sensitive analysis. Even when the desired structural dimensions are achieved, functionality of the sample may be hindered by implanted gallium and introduced defects. In this paper, vertical gallium distribution and lateral contamination for highly focused ion beam applications are investigated. SIMS analysis and Monte Carlo simulation are used for the determination for doses ranging from FIB inspection (1.10(14) cm(-2)) to sputter removal at high doses (up to 1.10(18) cm(-2)). The measurements revealed surface concentrations of 1.10(18) cm(-3) up to 6.10(21) cm(-3) and deep ranging tails. At doses exceeding 1.10(17) cm(-2), the surface concentration reaches 6.10(21) cm(-3) and saturates, which is in agreement with simulations. Lateral contamination is determined by gallium background implantation due to inspection before processing and by non scanned neutrals. Defect generation was investigated by TEM. Even for typical FIB inspection at low doses (30 keV, 1.10(14) cm(-2)) an amorphous layer is generated with a thickness of 50 nm.
引用
收藏
页码:695 / 698
页数:4
相关论文
共 50 条
  • [1] Focused Ion Beam Micro Machining and Micro Assembly
    Yang, Hongyi
    Rachev, Svetan
    PRECISION ASSEMBLY TECHNOLOGIES AND SYSTEMS, 2010, 315 : 81 - 86
  • [2] Laser and focused ion beam combined machining for micro dies
    Yoshida, Y.
    Okazaki, W.
    Uchida, T.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2012, 83 (02):
  • [3] Ga+ implantation in a PZT film during focused ion beam micro-machining
    Wollschlaeger, Nicole
    Oesterle, Werner
    Haeusler, Ines
    Stewart, Mark
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 3, 2015, 12 (03): : 314 - 317
  • [4] Focused ion beam machining of silicon
    Hung, NP
    Fu, YQ
    Ali, MY
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2002, 127 (02) : 256 - 260
  • [5] Ion beam, focused ion beam, and plasma discharge machining
    Allen, D. M.
    Shore, P.
    Evans, R. W.
    Fanara, C.
    O'Brien, W.
    Marson, S.
    O'Neill, W.
    CIRP ANNALS-MANUFACTURING TECHNOLOGY, 2009, 58 (02) : 647 - 662
  • [6] Focused ion beam micro-machining properties on WC-Co alloys
    Hosokawa, Hiroyuki
    Nakajima, Takeshi
    Shimojima, Koji
    Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy, 2006, 53 (02): : 187 - 191
  • [7] Machining Simulation in Focused Ion Beam Sputtering
    Matsumura, Takashi
    Ogasawara, Ryosuke
    JOURNAL OF MICRO AND NANO-MANUFACTURING, 2020, 8 (02):
  • [8] Focused ion beam machining and deposition for nanofabrication
    Davies, ST
    Khamsehpour, B
    VACUUM, 1996, 47 (05) : 455 - 462
  • [9] Characteristics of β-gallium oxide sputtering etching by focused gallium ion beam in the micro-nano scale fabrication
    Chen, Xi
    Chen, Ye
    Lin, Xi
    Xing, Yan
    Sensors and Actuators A: Physical, 2025, 381
  • [10] Machining with micro-size single crystalline diamond tools fabricated by a focused ion beam
    Ding, X.
    Butler, D. L.
    Lim, G. C.
    Cheng, C. K.
    Shaw, K. C.
    Liu, K.
    Fong, W. S.
    Zheng, H. Y.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2009, 19 (02)