Molecular Beam Epitaxy Growth of Tetragonal FeS Films on SrTiO3(001) Substrates

被引：7

作者：

Zhao, Kun ^{[1
]}

Lin, Hai-Cheng ^{[1
]}

Huang, Wan-Tong ^{[1
]}

Hu, Xiao-Peng ^{[1
,2
]}

Chen, Xi ^{[1
,2
]}

Xue, Qi-Kun ^{[1
,2
]}

Ji, Shuai-Hua ^{[1
,2
]}

机构：

[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2017年 / 34卷 / 08期

基金：

中国国家自然科学基金;

关键词：

SINGLE-LAYER FESE; SUPERCONDUCTIVITY;

D O I：

10.1088/0256-307X/34/8/087401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the successful growth of the tetragonal FeS film with one or two unit-cell (UC) thickness on SrTiO3(001) substrates by molecular beam epitaxy. Large lattice constant mismatch with the substrate leads to high density of defects in single-UC FeS, while it has been significantly reduced in the double-UC thick film due to the lattice relaxation. The scanning tunneling spectra on the surface of the FeS thin film reveal the electronic doping effect of single-UC FeS from the substrate. In addition, at the Fermi level, the energy gaps of approximately 1.5 meV are observed in the films of both thicknesses at 4.6 K and below. The absence of coherence peaks of gap spectra may be related to the preformed Cooper-pairs without phase coherence.

引用

页数：4

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