Nonvolatile nano-crystal floating gate OFET memory with light assisted program

被引：42
作者：
Wang, Hong [1 ,2 ]
Ji, Zhuoyu [1 ]
Shang, Liwei [1 ]
Chen, Yingping [1 ]
Han, Maixing [1 ]
Liu, Xin [1 ]
Peng, Yingquan [2 ]
Liu, Ming [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China
[2] Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
来源：
ORGANIC ELECTRONICS | 2011年 / 12卷 / 07期
基金：
美国国家科学基金会;
关键词：
Nonvolatile memory; Organic memory; Floating gate; Light assisted program; FIELD-EFFECT TRANSISTORS; THIN-FILM-TRANSISTOR; THRESHOLD VOLTAGE; CIRCUITS; DEVICES; LAYER;
D O I：
10.1016/j.orgel.2011.03.037
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, gold (Au) nanocrystals based nonvolatile floating gate OFET memory devices with light assisted program are studied. Programmable memory characteristics were observed according to the programming/ erasing operations and the memory window and on/off memory ratio were dramatically improved from 18 V, 10(2) to 63 V, 10(5) through light assisted program, respectively. Good reliability was confirmed by the data retention and endurances characteristics. Therefore, this method has potential applications in organic memory devices and integrated circuits. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码：1236 / 1240
页数：5
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