Thermal and ion induced annealing of nanocrystalline ZnO thin film deposited by atom beam sputtering

被引:36
作者
Agarwal, D. C. [1 ]
Singh, F. [2 ]
Kabiraj, D. [2 ]
Sen, S. [3 ]
Kulariya, P. K. [2 ]
Sulania, I. [2 ]
Nozaki, S. [3 ]
Chauhan, R. S. [1 ]
Avasthi, D. K. [2 ]
机构
[1] RBS Coll, Agra 282002, Uttar Pradesh, India
[2] Interuniv Accelerator Ctr, New Delhi 110067, India
[3] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan
关键词
D O I
10.1088/0022-3727/41/4/045305
中图分类号
O59 [应用物理学];
学科分类号
摘要
ZnO thin films were deposited using atom beam sputtering and their modifications have been shown by two processes: (a) thermal annealing of ZnO thin films in oxygen and (b) athermal annealing by irradiation of these films by swift heavy ions (SHIs) in a high vacuum chamber. The as-deposited films showed the nanocrystalline nature with a preferred orientation along the c-axis of the hexagonal structure as revealed by x-ray diffraction (XRD) and Raman spectra. The influence of the thermal annealing and athermal annealing on the structural and surface modifications of these thin films were investigated. XRD and Raman spectroscopy confirmed the improvement in the crystallinity of ZnO thin film by both thermal annealing and SHI irradiation. The Zn-O bonding was confirmed by Fourier transform infrared spectroscopy and the interpretation of IR spectra corroborated the XRD and Raman results. Surface morphology was investigated by atomic force microscopy. The AFM study of the films implied no significant change in the roughness of the films in both types of annealing conditions. It was concluded that the modification of nanocrystalline ZnO thin film could be possible by both thermal and athermal annealing. Results indicate that transient annealing by SHI irradiation induces the highly textured c-axis oriented ZnO thin film for device applications, comparable to those of high temperature annealing.
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页数:6
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共 30 条
[1]   Synthesis and characterization of ZnO thin film grown by electron beam evaporation [J].
Agarwal, D. C. ;
Chauhan, R. S. ;
Kumar, Amit ;
Kabiraj, D. ;
Singh, F. ;
Khan, S. A. ;
Avasthi, D. K. ;
Pivin, J. C. ;
Kumar, M. ;
Ghatak, J. ;
Satyam, P. V. .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (12)
[2]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[3]   Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li [J].
Bundesmann, C ;
Ashkenov, N ;
Schubert, M ;
Spemann, D ;
Butz, T ;
Kaidashev, EM ;
Lorenz, M ;
Grundmann, M .
APPLIED PHYSICS LETTERS, 2003, 83 (10) :1974-1976
[4]   Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].
Chen, YF ;
Bagnall, DM ;
Koh, HJ ;
Park, KT ;
Hiraga, K ;
Zhu, ZQ ;
Yao, T .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918
[5]   ZnO thin film deposition by laser ablation of Zn target in oxygen reactive atmosphere [J].
Dinescu, M ;
Verardi, P .
APPLIED SURFACE SCIENCE, 1996, 106 :149-153
[6]   INFRARED STUDY OF SURFACE PHONON MODES IN ZNO, CDS AND BEO SMALL CRYSTALS [J].
HAYASHI, S ;
NAKAMORI, N ;
KANAMORI, H ;
YODOGAWA, Y ;
YAMAMOTO, K .
SURFACE SCIENCE, 1979, 86 (JUL) :665-671
[7]   Room-temperature ultraviolet nanowire nanolasers [J].
Huang, MH ;
Mao, S ;
Feick, H ;
Yan, HQ ;
Wu, YY ;
Kind, H ;
Weber, E ;
Russo, R ;
Yang, PD .
SCIENCE, 2001, 292 (5523) :1897-1899
[8]   TEMPERATURE-INDUCED WAVELENGTH SHIFT OF ELECTRON-BEAM-PUMPED LASERS FROM CDSE, CDS, AND ZNO [J].
HVAM, JM .
PHYSICAL REVIEW B, 1971, 4 (12) :4459-&
[9]   p-type electrical conduction in ZnO thin films by Ga and N codoping [J].
Joseph, M ;
Tabata, H ;
Kawai, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11A) :L1205-L1207
[10]   Influence of step-like portions on the surface of ZnO/glass SAW filters on their frequency characteristics [J].
Kadota, M ;
Kondoh, C .
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1997, 44 (03) :658-665