Large eddy simulation of Marangoni convection in Czochralski crystal growth

被引:9
|
作者
Cen, Xianrong [1 ]
Zhan, Jiemin [1 ]
Li, Yok-Sheung [2 ]
机构
[1] Sun Yat Sen Univ, Dept Appl Mech & Engn, Guangzhou 510275, Guangdong, Peoples R China
[2] Hong Kong Polytech Univ, Dept Civil & Struct Engn, Hong Kong, Hong Kong, Peoples R China
关键词
large eddy simulation; Czochralski; crystal growth; Marangoni convection; MELT CONVECTION; FIELD; FLOW;
D O I
10.1002/crat.201000503
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Large eddy simulation model is used to simulate the fluid flow and heat transfer in an industrial Czochralski crystal growth system. The influence of Marangoni convection on the growth process is discussed. The simulation results agree well with experiment, which indicates that large eddy simulation is capable of capturing the temperature fluctuations in the melt. As the Marangoni number increases, the radial velocity along the free surface is strengthened, which makes the flow pattern shift from circumferential to spiral. At the same time, the surface tension reinforces the natural convection and forces the isotherms to curve downwards. It can also be seen from the simulation that a secondary vortex and the Ekman layer are generated. All these physical phenomena induced by Marangoni convection have great impacts on the shape of the growth interface and thus the quality of the crystal. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:14 / 22
页数:9
相关论文
共 50 条
  • [1] Marangoni convection in the LiCaAIF6 crystal growth by the Czochralski technique
    Zhong Zeng
    Jingqiu Chen
    Hiroshi Mizuseki
    Touetsu Shishido
    Kyoko Ichinoseki
    Yoshiyuki Kawazoe
    Journal of Thermal Science, 2002, 11 : 348 - 352
  • [2] Marangoni Convection in the LiCaAIF6 Crystal Growth by the Czochralski Technique
    Hiroshi Mizuseki
    Touetsu Shishido
    Kyoko Ichinoseki
    Yoshiyuki Kawazoe
    Journal of Thermal Science, 2002, (04) : 348 - 352
  • [3] Marangoni Convection in the LiCaAIF6 Crystal Growth by the Czochralski Technique
    Zeng, Zhong
    Chen, Jingqiu
    Mizuseki, Hiroshi
    Shishido, Touetsu
    Ichinoseki, Kyoko
    Kawazoe, Yoshiyuki
    JOURNAL OF THERMAL SCIENCE, 2002, 11 (04) : 348 - 352
  • [4] Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth
    Mokhtari, F.
    Bouabdallah, A.
    Zizi, M.
    Hanchi, S.
    Alemany, A.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2009, 44 (08) : 787 - 799
  • [5] Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field
    Chen, Xi
    Zhan, Jie-min
    Li, Yok-Sheung
    Cen, Xian-rong
    JOURNAL OF CRYSTAL GROWTH, 2014, 389 : 60 - 67
  • [6] Numerical Simulation of Marangoni Flow in Czochralski Crystal Growth Under Magnetic Field
    Cen, X. R.
    Zhan, J. M.
    RECENT PROGRESSES IN FLUID DYNAMICS RESEARCH - PROCEEDINGS OF THE SIXTH INTERNATIONAL CONFERENCE ON FLUID MECHANICS, 2011, 1376
  • [7] TURBULENT FREE CONVECTION IN CZOCHRALSKI CRYSTAL GROWTH
    WILCOX, WR
    FULLMER, LD
    JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) : 2201 - &
  • [8] Effect of Marangoni convection by using computation simulation during the Kyropoulos sapphire crystal growth
    Sun, M. W.
    Gao, Y. C.
    Gao, X.
    Zhang, L.
    Chen, H. X.
    PROCEEDINGS OF THE FIRST INTERNATIONAL CONFERENCE ON INFORMATION SCIENCES, MACHINERY, MATERIALS AND ENERGY (ICISMME 2015), 2015, 126 : 1699 - 1703
  • [9] Parallel simulation of Czochralski crystal growth
    Lukanin, D
    Kalaev, V
    Zhmakin, A
    PARALLEL PROCESSING AND APPLIED MATHEMATICS, 2004, 3019 : 469 - 474
  • [10] Turbulent melt convection and its implication on large diameter silicon Czochralski crystal growth
    Seidl, A
    Muller, G
    Dornberger, E
    Tomzig, E
    Rexer, B
    von Ammon, W
    SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2, 1998, : 417 - 428