Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization

被引：4

作者：

Nagata, Takahiro ^{[4
,5
]}

Suemoto, Yuya ^{[1
]}

Ueoka, Yoshihiro ^{[1
]}

Mesuda, Masami ^{[1
]}

Sang, Liwen ^{[2
]}

Chikyow, Toyohiro ^{[3
]}

机构：

[1] Tosoh Corp, Ayase, Kanagawa 2521123, Japan

[2] NIMS Int Ctr Mat Nanoarchitecton WPFMANA, Tsukuba, Ibaraki 3050044, Japan

[3] NIMS, Res & Serv Div Mat Data & Integrated Syst MaDIS, Tsukuba, Ibaraki 3050044, Japan

[4] Natl Inst Mat Sci NIMS, Res Ctr Funct Mat RCFM, Tsukuba, Ibaraki 3050044, Japan

[5] NIMS, Int Ctr Mat Nanoarchitecton WPFMANA, Tsukuba, Ibaraki 3050044, Japan

来源：

ACS OMEGA | 2022年 / 7卷 / 23期

关键词：

B-ION IMPLANTS; SI SUBSTRATE; GAN FILMS; SURFACE; GROWTH; SPECTROSCOPY; SCATTERING; AIN;

D O I：

10.1021/acsomega.2c00957

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The ability to control the polarity of an all-sputtered epitaxial GaN/AlN/Al film on a Si(111) substrate via intermediate oxidization was investigated. A stable surface of GaN on a Si substrate is a N-terminated surface (-c surface); hence, for electric device applications, the Ga-terminated surface (+c surface) is preferable. The GaN/AlN/Al film on Si(111) showed a -c surface, as confirmed by time-of-flight lowenergy atom scattering spectroscopy (TOFLAS) and X-ray photoelectron spectroscopy (XPS). The AlN layer was intentionally oxidized via air exposure during film growth. The GaN surface subjected to the oxidization process had the +c surface. Secondary-ion mass spectrometry measurements indicated a high oxygen concentration after the intentional oxidization. However, the intentional oxidization degraded the crystallinity of the GaN/AlN layer. By changing the oxidization point and repeating the GaN/AlN growth, the crystallinity of GaN was recovered. Such polarity control of GaN on Si grown by sputtering shows strong potential for the fabrication of largediameter +c-GaN template substrates at low cost.

引用

页码：19380 / 19387

页数：8