Weak localization in Ga1-xMnxAs:: Evidence of impurity band transport

被引：62

作者：

Rokhinson, L. P. ^{[1
]}

Lyanda-Geller, Y. ^{[1
]}

Ge, Z. ^{[2
]}

Shen, S. ^{[2
]}

Liu, X. ^{[2
]}

Dobrowolska, M. ^{[2
]}

Furdyna, J. K. ^{[2
]}

机构：

[1] Purdue Univ, Birk Nanotechnol Ctr, Dept Phys, W Lafayette, IN 47907 USA

[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 16期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.76.161201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the observation of negative magnetoresistance in the ferromagnetic semiconductor Ga(1-x)Mn(x)As, x=0.05-0.08, at low temperatures (T < 3 K) and low magnetic fields (0 < B < 20 mT). We attribute this effect to weak localization. Observation of weak localization strongly suggests impurity band transport in these materials, since for valence band transport one expects either weak antilocalization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interaction effects in this material.

引用

页数：4

共 27 条

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].

ABRAHAMS, E ;

ANDERSON, PW ;

LICCIARDELLO, DC ;

RAMAKRISHNAN, TV .

PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676

[2]

Altshuler B. L., 1981, SOV PHYS JETP, V54, P411

[3]

ALTSHULER BL, 1979, JETP LETT+, V30, P482

[4] MAGNETORESISTANCE AND HALL-EFFECT IN A DISORDERED 2-DIMENSIONAL ELECTRON-GAS [J].

ALTSHULER, BL ;

KHMELNITZKII, D ;

LARKIN, AI ;

LEE, PA .

PHYSICAL REVIEW B, 1980, 22 (11) :5142-5153

[5] Single-band model for diluted magnetic semiconductors: Dynamical and transport properties and relevance of clustered states [J].

Alvarez, G ;

Dagotto, E .

PHYSICAL REVIEW B, 2003, 68 (04)

[6] Anisotropic magnetoresistance in Ga1-xMnxAs -: art. no. 212407 [J].

Baxter, DV ;

Ruzmetov, D ;

Scherschligt, J ;

Sasaki, Y ;

Liu, X ;

Furdyna, JK ;

Mielke, CH .

PHYSICAL REVIEW B, 2002, 65 (21) :2124071-2124074

[7] Effects of disorder on ferromagnetism in diluted magnetic semiconductors [J].

Berciu, M ;

Bhatt, RN .

PHYSICAL REVIEW LETTERS, 2001, 87 (10) :1-107203

[8] Impurity band conduction in a high temperature ferromagnetic semiconductor [J].

Burch, K. S. ;

Shrekenhamer, D. B. ;

Singley, E. J. ;

Stephens, J. ;

Sheu, B. L. ;

Kawakami, R. K. ;

Schiffer, P. ;

Samarth, N. ;

Awschalom, D. D. ;

Basov, D. N. .

PHYSICAL REVIEW LETTERS, 2006, 97 (08)

[9] Transition temperature of ferromagnetic semiconductors: A dynamical mean field study [J].

Chattopadhyay, A ;

Das Sarma, S ;

Millis, AJ .

PHYSICAL REVIEW LETTERS, 2001, 87 (22) :227202-227202

[10] Free carrier-induced ferromagnetism in structures of diluted magnetic semiconductors [J].

Dietl, T ;

Haury, A ;

dAubigne, YM .

PHYSICAL REVIEW B, 1997, 55 (06) :R3347-R3350

← 1 2 3 →