First-principles study of Au-adsorption on clean Si(001) and H-Si(001) surface

被引：0

作者：

Li Tongwei ^{[1
]}

Ju Weiwei ^{[1
]}

Tang Zhengxin ^{[1
]}

Cao Wanmin ^{[1
]}

机构：

[1] Henan Univ Sci & Technol, Dept Math & Phys, Luoyang 453007, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2007年 / 36卷

关键词：

first-principles; Au; Si; clean surface; H-Si(001);

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using first-principles method the adsorption properties of An on clean and H-Si(001) surface were investigated. The results showed that adsorbed Au atoms could break Si-Si dimer bonds of the substrate on the clean Si(001) surface. The adsorbed Au atoms will stay on Si(001) surface at low temperature and they can diffuse into the substrate at relatively higher temperature due to the small energy barrier. The adsorption of An on H-Si(001)surface can not break Si-Si dimer bonds of the substrate which is contrary to the property of Au on clean Si(001)surface.

引用

页码：977 / 978

页数：2

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