Tensile strength and fracture mechanics of two-dimensional nanocrystalline silicon carbide

被引:13
作者
Chowdhury, Emdadul Haque [1 ]
Rahman, Md. Habibur [1 ]
Hong, Sungwook [2 ]
机构
[1] Bangladesh Univ Engn & Technol, Dept Mech Engn, Dhaka 1000, Bangladesh
[2] Calif State Univ, Dept Phys & Engn, Bakersfield, CA 93311 USA
关键词
Molecular dynamics simulations; Nanocrystalline SiC; Inverse pseudo hall-petch relation; Mechanical strength; Grain size; MOLECULAR-DYNAMICS SIMULATIONS; POLYCRYSTALLINE GRAPHENE; GRAIN-BOUNDARIES; BORON-NITRIDE; SIC SHEETS; MONOLAYER; SIZE; BN; CONSTRUCTION; NANORIBBONS;
D O I
10.1016/j.commatsci.2021.110580
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional Silicon Carbide (SiC) has opened the route to a cornucopia of advanced functionalities in the realm of quantum condensed matter. It holds great promise for highly efficient nanoelectronic, optoelectronic, renewable energy, and spintronic applications thanks to the confluence of a wide spectrum of mesmerizing physical properties like a wide direct bandgap with high exciton binding energy, robust spin-orbit-coupling, excellent photoluminescence, suitable mechanical strength, and thermodynamic stability. Nonetheless, it is still a daunting challenge to incorporate SiC in functional systems since extensive analyses of the mechanical properties, and fracture mechanism of nanocrystalline (NC)-SiC is still obscure. In this light, this work is an attempt to report detailed information concerning the room-temperature tensile mechanical properties and fracture phenomena of NC-SiC executing Molecular Dynamics (MD) simulations. In particular, effects of grain size on the stress-strain profile, fracture strength, fracture strain, and Young's modulus of the NC-SiC have been thoroughly investigated. It has been found that the strength as a function of grain size can be characterized by the inverse pseudo Hall-Petch relation. Increasing grain size brings about more elasticity in the structure, albeit at the price of fracture strain. The NC-SiC encounters a substantial degradation in mechanical properties relative to its singlecrystal counterpart. Afterward, we performed an exhaustive fracture analysis on two NC-SiC samples of different grain sizes. The single-crystal SiC can endure more tensile strain before rupture compared to that of the NC-SiC. At last, the nanosheet exhibits more immunity to fracture with decreasing grain size. This study would lay the groundwork for NC-SiC to be successfully realized in functional systems as well as serving as a solid roadmap for engineering the mechanical properties of nanocrystalline materials.
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页数:8
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共 87 条
[81]   Tuning band gaps of BN nanosheets and nanoribbons via interfacial dihalogen bonding and external electric field [J].
Tang, Qing ;
Bao, Jie ;
Li, Yafei ;
Zhou, Zhen ;
Chen, Zhongfang .
NANOSCALE, 2014, 6 (15) :8624-8634
[82]   Interaction potential for silicon carbide: A molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide [J].
Vashishta, Priya ;
Kalia, Rajiv K. ;
Nakano, Aiichiro ;
Rino, Jose Pedro .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)
[83]  
WEIBULL W, 1951, J APPL MECH-T ASME, V18, P293
[84]   Topological defects in graphene: Dislocations and grain boundaries [J].
Yazyev, Oleg V. ;
Louie, Steven G. .
PHYSICAL REVIEW B, 2010, 81 (19)
[85]   Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions [J].
Zhang, Shengli ;
Yan, Zhong ;
Li, Yafei ;
Chen, Zhongfang ;
Zeng, Haibo .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2015, 54 (10) :3112-3115
[86]   Flaw Insensitive Fracture in Nanocrystalline Graphene [J].
Zhang, Teng ;
Li, Xiaoyan ;
Kadkhodaei, Sara ;
Gao, Huajian .
NANO LETTERS, 2012, 12 (09) :4605-4610
[87]   Tunable electronic and magnetic properties of two-dimensional materials and their one-dimensional derivatives [J].
Zhang, Zhuhua ;
Liu, Xiaofei ;
Yu, Jin ;
Hang, Yang ;
Li, Yao ;
Guo, Yufeng ;
Xu, Ying ;
Sun, Xu ;
Zhou, Jianxin ;
Guo, Wanlin .
WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE, 2016, 6 (04) :324-350