An experimental evaluation of the on-state performance of trench IGBT designs

被引：19

作者：

Thapar, N ^{[1
]}

Baliga, BJ ^{[1
]}

机构：

[1] N Carolina State Univ, Power Semicond Res Ctr, Raleigh, NC 27695 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 05期

关键词：

D O I：

10.1016/S0038-1101(97)00301-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The on-state performance of non-self aligned and self aligned trench IGBT designs is experimentally evaluated and compared for the first lime in this paper. In contrast to previous reports based only on numerical simulations, experimental results presented in this paper demonstrate that the nonself aligned trench IGBT designs are superior to the self-aligned trench IGBT designs. Furthermore, the variation in the on-state voltage drop with the unit cell parameters of the non-self trench IGBT obtained through numerical simulations show trends that are opposite to those observed experimentally. Our analysis indicates that the disagreement between the experimental and numerical simulation results arises due to the assumption of an ideal ohmic contact to the N+ emitter of the TIGBT designs made in previous numerical simulations. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：771 / 776

页数：6

共 6 条

[1]

CHANG CY, 1989, SOLID STATE ELECT, V14, P541

[2] 500-V N-CHANNEL INSULATED-GATE BIPOLAR-TRANSISTOR WITH A TRENCH GATE STRUCTURE [J].

CHANG, HR ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1824-1829

[3]

HARDA M, 1994, P IEEE INT S POW SEM, P411

[4]

Hotz R., 1995, Proceedings of the 7th International Symposium on Power Semiconductor Devices and ICs, ISPSD '95 (IEEE Cat. No.95CH35785), P224, DOI 10.1109/ISPSD.1995.515039

[5]

THAPAR N, 1996, P IEEE INT S POW SEM, P83

[6]

UDREA F, 1995, ISPSD '95 - PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P190, DOI 10.1109/ISPSD.1995.515033

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