InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

被引：11
作者：
Gao, Fubao
Chen, NuoFu
Liu, Lei
Zhang, X. W.
Wu, Jinliang
Yin, Zhigang
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100080, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 304卷 / 02期
基金：
中国国家自然科学基金;
关键词：
crystal structure; liquid-phase epitaxy; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2007.03.011
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：472 / 475
页数：4
相关论文
共 23 条
[11]   LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE OF INASSB GROWN ON GASB SUBSTRATES FROM ANTIMONY SOLUTION [J].
MAO, Y ;
KRIER, A .
JOURNAL OF CRYSTAL GROWTH, 1993, 133 (1-2) :108-116
[12]   Substrate lattice constant effect on the miscibility gap of MBE grown InAsSb [J].
Miyoshi, H ;
Horikoshi, Y .
JOURNAL OF CRYSTAL GROWTH, 2001, 227 :571-576
[13]   Ultimate parameters of Hg1-xCdxTe and InAs1-xSbx n+-p photodiodes [J].
Niedziela, T ;
Ciupa, R .
SOLID-STATE ELECTRONICS, 2001, 45 (01) :41-46
[14]   Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 μm infrared detectors [J].
Peng, CT ;
Chen, NF ;
Gao, FB ;
Zhang, XW ;
Chen, CL ;
Wu, JL ;
Yu, YD .
APPLIED PHYSICS LETTERS, 2006, 88 (24)
[15]   EFFECT OF DEFECT FIELDS ON OPTICAL ABSORPTION EDGE [J].
REDFIELD, D .
PHYSICAL REVIEW, 1963, 130 (03) :916-&
[16]   LIQUID-PHASE EPITAXY OF IN(AS,SB) ON GASB SUBSTRATES USING ANTIMONY-RICH MELTS [J].
SKELTON, JR ;
KNIGHT, JR .
SOLID-STATE ELECTRONICS, 1985, 28 (11) :1166-1168
[17]   ATOMIC-STRUCTURE AND ORDERING IN SEMICONDUCTOR ALLOYS [J].
SRIVASTAVA, GP ;
MARTINS, JL ;
ZUNGER, A .
PHYSICAL REVIEW B, 1985, 31 (04) :2561-2564
[18]   TRANSPORT-PROPERTIES OF INASXSB1-X (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.55) ON INP GROWN BY MOLECULAR-BEAM EPITAXY [J].
TSUKAMOTO, S ;
BHATTACHARYA, P ;
CHEN, YC ;
KIM, JH .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) :6819-6822
[19]   PROPOSAL FOR III-V ORDERED ALLOYS WITH INFRARED BAND-GAPS [J].
WEI, SH ;
ZUNGER, A .
APPLIED PHYSICS LETTERS, 1991, 58 (23) :2684-2686
[20]   OPTICAL ENERGY-GAP VARIATION IN INAS-INSB ALLOYS [J].
WOOLLEY, JC ;
WARNER, J .
CANADIAN JOURNAL OF PHYSICS, 1964, 42 (10) :1879-&
123