InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

被引：11
作者：
Gao, Fubao
Chen, NuoFu
Liu, Lei
Zhang, X. W.
Wu, Jinliang
Yin, Zhigang
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100080, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 304卷 / 02期
基金：
中国国家自然科学基金;
关键词：
crystal structure; liquid-phase epitaxy; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2007.03.011
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.
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收藏
页码：472 / 475
页数：4
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