Low resistivity ohmic contacts on lightly doped n-type -Ga2O3 using Mg/Au

被引：15

作者：

Shi, Jianjun ^{[1
]}

Xia, Xiaochuan ^{[1
]}

Liang, Hongwei ^{[1
]}

Abbas, Qasim ^{[1
]}

Liu, Jun ^{[1
]}

Zhang, Heqiu ^{[1
]}

Liu, Yang ^{[1
]}

机构：

[1] Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 04期

基金：

美国国家科学基金会; 中国博士后科学基金;

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; GROWTH;

D O I：

10.1007/s10854-019-00669-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mg/Au stacks were introduced to prepare ohmic contact at different annealing temperatures on Sn lightly doped -Ga2O3. Linear current-voltage characteristics were realized when the annealing temperatures were 300, 400 and 500 degrees C. The transmission line measurements were used to extract the specific contact resistance ((c)) of the annealed samples. The (c) decreased as annealing temperature increased and a minimum (c) of 2.1x10(-5)cm(2) was obtained for the sample annealed at 500 degrees C. However, the contact electrodes with the (c) of 1.3x10(-4)cm(2) after annealing at 400 degrees C had better surface profile and stability. The ohmic contact mechanism and stability of electrodes were discussed in details.

引用

页码：3860 / 3864

页数：5

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