Multilayer atom chips for versatile atom micromanipulation

被引：37

作者：

Trinker, M. ^{[1
]}

Groth, S. ^{[2
]}

Haslinger, S. ^{[1
]}

Manz, S. ^{[1
]}

Betz, T. ^{[1
]}

Schneider, S. ^{[1
]}

Bar-Joseph, I. ^{[3
]}

Schumm, T. ^{[1
]}

Schmiedmayer, J. ^{[1
,2
]}

机构：

[1] Vienna Univ Technol, A-1020 Vienna, Austria

[2] Univ Heidelberg, Inst Phys, D-69120 Heidelberg, Germany

[3] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 25期

基金：

奥地利科学基金会;

关键词：

D O I：

10.1063/1.2945893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We employ a combination of optical and electron-beam lithography to create an atom chip combining submicron wire structures with larger conventional wires on a single substrate. The multilayer fabrication enables crossed wire configurations, greatly enhancing the flexibility in designing potentials for ultracold quantum gases and Bose-Einstein condensates. Large current densities of > 6x10(7) A/cm(2) and high voltages of up to 65 V across 0.3 mu m gaps are supported by even the smallest wire structures. We experimentally demonstrate the flexibility of the next generation atom chip by producing Bose-Einstein condensates in magnetic traps created by a combination of wires involving all different fabrication methods and structure sizes. (c) 2008 American Institute of Physics.

引用

页数：3

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