Reduction in efficiency droop/decline of green GaN-based light-emitting diodes by employing heterostructure cap layer

被引：2

作者：

Usman, Muhammad ^{[1
]}

Anwar, Abdur-Rehman ^{[1
]}

Saba, Kiran ^{[2
]}

Munsif, Munaza ^{[1
]}

Perlin, Piotr ^{[2
]}

机构：

[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23460, Khyber Pakhtunk, Pakistan

[2] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2020年 / 258卷

关键词：

InGaN; Light-emitting diodes; Efficiency; Green; ENHANCEMENT; HOLE;

D O I：

10.1016/j.mseb.2020.114576

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we theoretically studied the enhancement of carrier injection by employing heterostructure layers before p-GaN in green light-emitting diodes. It is evident from the simulation results that improved carrier injection results in high internal quantum efficiency and light output power in the structures using hetero-structures on the p-side. In comparison to conventional structure, reduced efficiency droop is observed suggesting promising high-performance green light-emitting diodes.

引用

页数：5

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