Cryogenic capacitive transimpedance amplifier for astronomical infrared detectors

被引：45

作者：

Nagata, H ^{[1
]}

Shibai, H

Hirao, T

Watabe, T

Noda, M

Hibi, Y

Kawada, M

Nakagawa, I

机构：

[1] Natl Astron Observ, Ctr Adv Technol, Mitaka, Tokyo 1818588, Japan

[2] Nagoya Univ, Dept Phys, Sch Sci, Nagoya, Aichi 4648602, Japan

[3] Nagoya City Sci Museum, Nagoya, Aichi 4600008, Japan

[4] Japan Aerosp Explorat Agcy, Infrared Astrophys Grp, Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 02期

基金：

日本学术振兴会;

关键词：

capacitive transimpedance amplifier; cryogenic electronics; far-infrared array sensors; far-infrared astronomy; MOSFETs; silicon;

D O I：

10.1109/TED.2003.821764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a new capacitive transimpedance amplifier (CTIA) that can be operated at 2 K, and have good performance as readout circuits of astronomical far-infrared array detectors. The circuit design of the present CTIA consists of silicon p-MOSFETs and other passive elements. The process is a standard Bi-CMOS process with 0.5 mum design rule. The open-loop gain of the CTIA is more than 300, resulting in good integration performance. The output voltage swing of the CTIA was 270 mV. The power consumption for each CTIA is less than 10 muW. The noise at the output showed a 1/f noise spectrum of 4 muV/rootHz at 1 Hz. The performance of this CTIA nearly fulfills the requirements for the far-infrared array detectors onboard ASTRO-F, Japanese infrared astronomical satellite to be launched in 2005.

引用

页码：270 / 278

页数：9

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