X-ray photoelectron spectroscopy and grazing incidence X-ray reflectivity study of silicon nitride thin films

被引：22

作者：

Li, BQ ^{[1
]}

Fujimoto, T ^{[1
]}

Fukumoto, N ^{[1
]}

Honda, K ^{[1
]}

Kojima, I ^{[1
]}

机构：

[1] Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 305, Japan

来源：

THIN SOLID FILMS | 1998年 / 334卷 / 1-2期

关键词：

X-ray total reflection analysis; X-ray photoelectron spectroscopy; silicon nitride; thin films;

D O I：

10.1016/S0040-6090(98)01132-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nitride thin films were deposited by rf magnetron sputtering with various gas flow conditions (N-2/Ar). The effect of gas flow conditions on the structure and compositions of the films was investigated. X-ray photoelectron spectroscopy indicated that the binding energy of the Si 2p state successively shifted to higher energy while the binding energy of the N 1s state showed no change with the increase of the N-2/Ar ratio. The films deposited under conditions of N-2/Ar ratio below 0.5 were silicon-rich while the films formed with the N-2/Ar ratio more than 0.5 were nitrogen-rich. Nearly stoichiometric Si3N4 films can be obtained at the N-2/Ar ratio of 0.5. Grazing incidence X-ray reflectivity showed that the nearly stoichiometric Si3N4 film had a higher density (3.17 g/cm(3)) while the silicon-rich or nitrogen-rich resulted in a decrease in film density. The surface roughness of these films lies almost in the same level. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：140 / 144

页数：5

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