Single-charge transport in ambipolar silicon nanoscale field-effect transistors

被引：8

作者：

Mueller, Filipp ^{[1
]}

Konstantaras, Georgios ^{[1
]}

van der Wiel, Wilfred G. ^{[1
]}

Zwanenburg, Floris A. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NanoElect Grp, NL-7500 AE Enschede, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 17期

基金：

欧洲研究理事会;

关键词：

ELECTRICAL CONTROL; COULOMB-BLOCKADE; QUANTUM; SPIN; HOLE; OSCILLATIONS; QUBIT;

D O I：

10.1063/1.4919110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report single-charge transport in ambipolar nanoscale MOSFETs, electrostatically defined in near-intrinsic silicon. We use the ambipolarity to demonstrate the confinement of either a few electrons or a few holes in exactly the same crystalline environment underneath a gate electrode. We find similar electron and hole quantum dot properties while the mobilities differ quantitatively like in microscale devices. The understanding and control of individual electrons and holes are essential for spin-based quantum information processing. (C) 2015 AIP Publishing LLC.

引用

页数：5

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