EFFECT OF LASER ON THE NONPARABOLICITY OF THE CONDUCTION BAND AND HYDROGENIC IMPURITY STATES IN A SEMICONDUCTOR QUANTUM WELL

被引：3
作者：
Reuben, A. Merwyn Jasper D. [1 ]
Nithiananthi, P. [1 ]
Mohan, C. Raja [1 ]
Jayakumar, K. [1 ]
机构：
[1] Gandhigram Rural Univ, Dept Phys, Gandhigram 624302, Tamil Nadu, India
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2011年 / 25卷 / 13期
关键词：
Laser field; quantum well; hydrogenic donor; excited states; nonparabolicity; DONOR IMPURITIES; BINDING-ENERGY; INTENSE; FIELDS; ATOMS; WIRE;
D O I：
10.1142/S0217979211100448
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of laser on the nonparabolicity of the conduction band for hydrogenic donor states like 1s, 2s, 2p +/- and 2p(0) in a GaAs/Al(x)Ga(1-x) As quantum well have been computed in a finite barrier model using variational principle in the effective mass approximation. The limiting values of the ground state and few excited state binding energies for a laser dressed-donor have been obtained. The results are presented and discussed.
引用
收藏
页码：1785 / 1790
页数：6
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