共 4 条
Exploration in the two-photon absorption effect of silicon based films
被引:0
作者:
Yang, Ming
[1
]
Li, Juan
[1
]
Yao, Ying
[1
]
Yin, Chun-Jian
[1
]
Wu, Chun-Ya
[1
]
Zhu, Xiao-Nong
[2
]
Xu, Zhi-Jun
Xiong, Shao-Zhen
[1
]
机构:
[1] Nankai Univ, Inst Photoelect, Tianjin 300071, Peoples R China
[2] Nankai Univ, Inst Photol, Tianjin 300071, Peoples R China
来源:
OPTOELECTRONIC MATERIALS, PTS 1AND 2
|
2010年
/
663-665卷
关键词:
Silicon based film;
Femto-second laser;
Laser crystallization;
Two-photon absorption;
Z-scan;
LASER-INDUCED CRYSTALLIZATION;
AMORPHOUS-SILICON;
D O I:
10.4028/www.scientific.net/MSF.663-665.348
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
In this work, the crystallization of different silicon based thin films as the precursor of crystallization was investigated by femto-second laser with 800 nm wavelength. The linear absorption coefficient of a-Si films at that wavelength is quit lower than the other structures of Si-based thin film, which has no related with the incident light energy. However, we found that the crystallization of a-Si films was better than mu c-Si films as the precursor. We use Z-scan techniques to prove that the two-photon absorption effect would be responsible for the crystallization. And unlike the linear absorption, the two-photon absorption effect is correlated with the incident light energy, as well as the micro-structure of the silicon based film. At the end of the paper, the crystallization by laser with wavelength longer than the absorption limit was discussed.
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页码:348 / +
页数:2
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