Raman characterization of the structural evolution in amorphous and partially nanocrystalline hydrogenated silicon thin films prepared by PECVD

被引：71

作者：

Li, Zhi ^{[1
]}

Li, Wei ^{[1
]}

Jiang, Yadong ^{[1
]}

Cai, Haihong ^{[1
]}

Gong, Yuguang ^{[1
]}

He, Jian ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Sch Optoelect Informat, Chengdu 610054, Peoples R China

来源：

JOURNAL OF RAMAN SPECTROSCOPY | 2011年 / 42卷 / 03期

关键词：

a-Si:H; nc-Si:H; plasma-enhanced chemical vapor deposition (PECVD); Raman spectroscopy; transmission electron microscopy (TEM); CHEMICAL-VAPOR-DEPOSITION; MICROCRYSTALLINE SILICON; CRYSTALLINE SILICON; GLOW-DISCHARGE; ARGON DILUTION; SPECTRA; PHOTOLUMINESCENCE; SPECTROSCOPY; ABSORPTION; SCATTERING;

D O I：

10.1002/jrs.2711

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Hydrogenated silicon (Si:H) thin films were obtained by plasma-enhanced chemical vapor deposition (PECVD). Raman spectroscopy was used to investigate the structural evolution in phosphor-doped n-type amorphous hydrogenated silicon thin films, which were prepared under different substrate temperatures and gas pressures. Meanwhile, the effect of nitrogen doping on the structure of P-doped thin films was also investigated by Raman spectroscopy. Moreover, the transition from the amorphous state to the nanocrystalline state of undoped Si:H films deposited through low argon dilution was studied by Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. The results show that Raman spectroscopy can sensitively detect the structural evolution in hydrogenated silicon thin films deposited under different conditions in a PECVD system. Copyright (C) 2010 John Wiley & Sons, Ltd.

引用

页码：415 / 421

页数：7

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