Wide-Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells

被引：92

作者：

Li, Zijia ^{[1
]}

Kim, Tae Hak ^{[2
]}

Han, Sung Yong ^{[3
]}

Yun, Yeo-Jun ^{[4
]}

Jeong, Seonghwa ^{[1
]}

Jo, Bonghyun ^{[1
]}

Ok, Song Ah ^{[3
]}

Yim, Woongbin ^{[3
]}

Lee, Seung Hu ^{[3
]}

Kim, Kangho ^{[4
]}

Moon, Sunghyun ^{[4
]}

Park, Ji-Yong ^{[3
]}

Ahn, Tae Kyu ^{[1
]}

Shin, Hyunjung ^{[1
]}

Lee, Jaejin ^{[4
]}

Park, Hui Joon ^{[2
]}

机构：

[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea

[2] Hanyang Univ, Dept Organ & Nano Engn, Seoul 04763, South Korea

[3] Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea

[4] Ajou Univ, Dept Elect & Comp Engn, Suwon 16499, South Korea

来源：

ADVANCED ENERGY MATERIALS | 2020年 / 10卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

gallium arsenide; perovskite; GaAs tandem cells; phase segregation; thin-film flexible tandem cells; wide-bandgap perovskites; LEAD HALIDE PEROVSKITES; DETAILED BALANCE LIMIT; HIGH-EFFICIENCY; GAP; SEGREGATION; PERFORMANCE; GROWTH; FILM; PHOTOVOLTAICS; CONVERSION;

D O I：

10.1002/aenm.201903085

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Gallium arsenide (GaAs) photovoltaic (PV) cells have been widely investigated due to their merits such as thin-film feasibility, flexibility, and high efficiency. To further increase their performance, a wider bandgap PV structure such as indium gallium phosphide (InGaP) has been integrated in two-terminal (2T) tandem configuration. However, it increases the overall fabrication cost, complicated tunnel-junction diode connecting subcells are inevitable, and materials are limited by lattice matching. Here, high-efficiency and stable wide-bandgap perovskite PVs having comparable bandgap to InGaP (1.8-1.9 eV) are developed, which can be stable low-cost add-on layers to further enhance the performance of GaAs PVs as tandem configurations by showing an efficiency improvement from 21.68% to 24.27% (2T configuration) and 25.19% (4T configuration). This approach is also feasible for thin-film GaAs PV, essential to reduce its fabrication cost for commercialization, with performance increasing from 21.85% to 24.32% and superior flexibility (1000 times bending) in a tandem configuration. Additionally, potential routes to over 30% stable perovskite/GaAs tandems, comparable to InGaP/GaAs with lower cost, are considered. This work can be an initial step to reach the objective of improving the usability of GaAs PV technology with enhanced performance for applications for which lightness and flexibility are crucial, without a significant additional cost increase.

引用

页数：16

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