640x480 MCT 3-5μm snapshot focal plane array

被引：5

作者：

Audebert, P ^{[1
]}

Giotta, D ^{[1
]}

Mottin, E ^{[1
]}

Rambaud, P ^{[1
]}

Marion, F ^{[1
]}

机构：

[1] CEAG, LETI, DOPT, F-38054 Grenoble 9, France

来源：

INFRARED DETECTORS AND FOCAL PLANE ARRAYS V | 1998年 / 3379卷

关键词：

infrared detectors; IRCMOS; MCT; snapshot;

D O I：

10.1117/12.317626

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

A 640x480 snapshot IRCMOS array with 25 micron pitch operating in the 3-5 microns range was fabricated and an image demonstrated at the Infrared Laboratory (LIR). The readout circuit with 2pC charge handling capacity was designed and processed with a 1.2 mu m design rules standard CMOS technology. Photovoltaic (PV) detectors were achieved by ion implantation in liquid phase epitaxy MCT layers and interconnected by indium bumps on the readout circuit. A description of the component is given and the main electro-optical characteristics are presented. The pixel operability is greater than 99.8% and a NEDT of 15 mK was measured at half dynamics. Excellent imagery has been obtained with this component operating at 77K and f/2 optics.

引用

页码：577 / 585

页数：9