Synergetic effects in annealing and low energy ion bombardment of Si(100) surfaces

Synergetic effects have been observed for low energy Arf ion bombardment combined with low temperature annealing for producing clean and well-ordered Si(100) surfaces. Low energy, mass-selected Ar+ bombardment of Si(100) surfaces in the range of 50-300 eV was performed over the temperature range 25-500 degrees C. The surfaces were characterized by in situ Auger electron spectroscopy and reflection high energy electron diffraction and ex situ atomic force microscopy. It is found that a clean and well-ordered Si surface can be obtained at a lower temperature when ion bombardment and annealing are applied simultaneously than if they are applied separately or in sequence. Nearly ideal surfaces can be obtained for the conditions of 100-200 eV Ar+ bombardment at 400-500 degrees C. This synergy between ion bombardment and annealing is discussed in terms of a subplantation model that includes Ar-defect complexes. Additionally, formation of SiC by 100 eV Ar+ ion bombardment of the carbon contaminated silicon surface was observed. (C) 1998 American Institute of Physics.