The difference between the transverse and in-plane resistivity of vacuum evaporated cadmium sulfide (CdS) thin films

被引:16
作者
He, ZB [1 ]
Zhao, GL [1 ]
Weng, WJ [1 ]
Du, PY [1 ]
Shen, G [1 ]
Han, GR [1 ]
机构
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab SIlicon Mat, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
transverse resistivity; in-plane resistivity; CdS films;
D O I
10.1016/j.vacuum.2005.01.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
US films were prepared by vacuum evaporation. X-ray diffraction was used to analyze the crystal structure of US films. Only hexagonal phase with the preferred orientation of the (0 0 2) plane was found in CdS films, The in-plane and transverse resistivities were measured. The value of in-plane resistivities is in the range of 0.333 - 18.9 Omega cm at room temperature. The value of transverse resistivities was about 8 orders more than that of in-plane resistivities. The relationship between the in-plane resistivity and the substrate temperature was different from that of the transverse resistivity and the substrate temperature. The in-plane resistivity of CdS films had it minimum at the substrate temperature of 150 degrees C. while the transverse resistivity of US films had the maximum at the substrate temperature of 150 degrees C. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:14 / 18
页数:5
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