The electrochemical carbon nanotube field-effect transistor.

被引:0
|
作者
Schoenenberger, C
Krueger, M
Buitelaar, M
Nussbaumer, T
Forro, L
机构
[1] Univ Basel, Inst Phys, CH-4052 Basel, Switzerland
[2] EPFL, Inst Genie Atom, CH-1015 Lausanne, Switzerland
来源
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2001年 / 221卷
关键词
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
220-IEC
引用
收藏
页码:U587 / U587
页数:1
相关论文
共 50 条
  • [1] Electrochemical carbon nanotube field-effect transistor
    Krüger, M
    Buitelaar, MR
    Nussbaumer, T
    Schönenberger, C
    Forró, L
    APPLIED PHYSICS LETTERS, 2001, 78 (09) : 1291 - 1293
  • [2] FIELD-EFFECT TRANSISTOR.
    Anon
    1600, (28):
  • [3] delta -DOPED FIELD-EFFECT TRANSISTOR.
    Schubert, E.F.
    Ploog, K.
    Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (08): : 608 - 610
  • [4] CHARGE STORAGE JUNCTION FIELD-EFFECT TRANSISTOR.
    Arai, M.
    1973, : 72 - 74
  • [5] A Carbon Nanotube Field-Effect Transistor with a Cantilevered Carbon Nanotube Gate
    Matsunaga, Naoyuki
    Arie, Takayuki
    Akita, Seiji
    APPLIED PHYSICS EXPRESS, 2012, 5 (06)
  • [6] Carbon nanotube field-effect transistor with a carbon nanotube gate electrode
    Park, Ji-Yong
    NANOTECHNOLOGY, 2007, 18 (09)
  • [7] DISTRIBUTED MODEL OF MICROWAVE FIELD-EFFECT TRANSISTOR.
    Moskalyuk, V.A.
    Timofeev, V.I.
    Shovkun, I.D.
    Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Z, 1986, 29 (06): : 82 - 84
  • [8] Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor
    Natori, K
    Kimura, Y
    Shimizu, T
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)
  • [9] HIGH-CURRENT FIELD-EFFECT TRANSISTOR.
    Jambotkar, C.G.
    IBM technical disclosure bulletin, 1985, 27 (08): : 4634 - 4637
  • [10] Carbon Nanotube Field-Effect Transistor for DNA Sensing
    Xuan, Chu T.
    Thuy, Nguyen T.
    Luyen, Tran T.
    Huyen, Tran T. T.
    Tuan, Mai A.
    JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (06) : 3507 - 3511