TRANSPORT PROPERTIES OF Ag-DOPED La0.7Ca0.3MnO3 THIN FILMS ON SILICON SUBSTRATE

被引：2

作者：

Jiang, H. C. ^{[1
]}

Zhang, W. L. ^{[1
]}

Cao, X. F. ^{[1
]}

Zhang, W. X. ^{[1
]}

Peng, B. ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2010年 / 24卷 / 27期

关键词：

LCMO thin films; Ag-doping; transport properties; metal-insulator transition; MAGNETORESISTANCE; LA1-XSRXMNO3; MANGANITES; TRANSITION;

D O I：

10.1142/S0217979210056141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ag-doped La0.7Ca0.3MnO3 (LCMO) films were prepared on silicon substrate by RF magnetron sputtering. The dependences of transport properties on annealing temperature were explored. It is shown that the resistivity of the samples decreases and the metal-insulator transition temperature shifts to higher temperature with the increase in annealing temperature. Two metal-insulator transition temperatures are presented in the R - T plots of Ag-doped LCMO films, which can be explained by the Ag1+ substitution of La3+ to form La1-xAgxMnO3 compound. Compared with LCMO thin films, Ag-doping can observably improve the TM-I and decrease the resistivity of the samples.

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页码：5451 / 5456

页数：6

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