Identification and roles of nonstoichiometric oxygen in amorphous Ta2O5 thin films deposited by electron beam and sputtering processes

被引:32
作者
Mannequin, Cedric [1 ]
Tsuruoka, Tohru [1 ]
Hasegawa, Tsuyoshi [2 ]
Aono, Masakazu [1 ]
机构
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[2] Waseda Univ, Dept Appl Phys, Shinjuku Ku, 3-4-1 Okubo, Tokyo 1698555, Japan
关键词
Oxides; Composition; H2O absorption; Nonstoichiometric oxygen; Fourier transformed infrared spectroscopy; X-ray photoelectron spectroscopy; X-RAY-ABSORPTION; TANTALUM OXIDE; OPTICAL-PROPERTIES; NB2O5; XPS; CRYSTALLIZATION; MICROSTRUCTURE; SPECTROSCOPY; STABILITY; OXIDATION;
D O I
10.1016/j.apsusc.2016.04.099
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The morphology and composition of tantalum oxide (Ta2O5) thin films prepared by electron-beam (EB) evaporation and radio-frequency sputtering (SP) were investigated by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), atomic force microscopy, Fourier transformed infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). GIXRD revealed an amorphous nature for both films, and XRR showed that the density of the Ta2O5-EB films was lower than that of the Ta2O5-SP films; both films have lower density than the bulk value. A larger amount of molecular water and peroxo species were detected for the Ta2O5-EB films by FTIR performed in ambient atmosphere. XPS analyses performed in vacuum confirmed the presence of hydroxyl groups, but no trace of chemisorbed molecular water was detected. In addition, a higher oxygen nonstoichiometry (higher O/Ta ratio) was found for the EB films. From these results, we conclude that the oxygen nonstoichiometry of the EB film accounted for its lower density and higher amount of absorbed molecular water. The results also suggest the importance of understanding the dependence of the structural and chemical properties of thin amorphous oxide films on the deposition process. (C) 2016 Published by Elsevier B.V.
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页码:426 / 435
页数:10
相关论文
共 72 条
[1]   ELLIPSOMETRIC EXAMINATION OF GROWTH AND DISSOLUTION RATES OF TA2O5 FILMS FORMED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
AN, CH ;
SUGIMOTO, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (07) :1956-1962
[2]  
[Anonymous], POWD DIFFR FIL
[3]   X-ray photoelectron spectroscopy of thermal thin Ta2O5 films on Si [J].
Atanassova, E ;
Spassov, D .
APPLIED SURFACE SCIENCE, 1998, 135 (1-4) :71-82
[4]   AES AND XPS STUDY OF THIN RF-SPUTTERED TA2O5 LAYERS [J].
ATANASSOVA, E ;
DIMITROVA, T ;
KOPRINAROVA, J .
APPLIED SURFACE SCIENCE, 1995, 84 (02) :193-202
[5]   Anomalous X-ray reflectivity study of metal oxide thin films [J].
Banerjee, S ;
Park, YJ ;
Lee, DR ;
Jeong, YH ;
Lee, KB ;
Yoon, SB ;
Choi, HM ;
Park, JC ;
Roh, JS ;
Sanyal, MK .
APPLIED SURFACE SCIENCE, 1998, 136 (1-2) :41-45
[6]   Structural characterization of amorphous Ta2O5 and SiO2-Ta2O5 used as solid electrolyte for nonvolatile switches [J].
Banno, Naoki ;
Sakamoto, Toshitsugu ;
Iguchi, Noriyuki ;
Matsumoto, Masashi ;
Imai, Hideto ;
Ichihashi, Toshinari ;
Fujieda, Shinji ;
Tanaka, Kazuhiko ;
Watanabe, Satoshi ;
Yamaguchi, Shu ;
Hasegawa, Tsuyoshi ;
Aono, Masakazu .
APPLIED PHYSICS LETTERS, 2010, 97 (11)
[7]  
Briggs D., 1990, Practical Surface Analysis, V1, P437
[8]   Evaluating tantalum oxide stoichiometry and oxidation states for optimal memristor performance [J].
Brumbach, Michael T. ;
Mickel, Patrick R. ;
Lohn, Andrew J. ;
Mirabal, Alex J. ;
Kalan, Michael A. ;
Stevens, James E. ;
Marinella, Matthew J. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (05)
[9]   Effect of substrate temperature on the structural, optical and electrical properties of dc magnetron sputtered tantalum oxide films [J].
Chandra, S. V. Jagadeesh ;
Uthanna, S. ;
Rao, G. Mohan .
APPLIED SURFACE SCIENCE, 2008, 254 (07) :1953-1960
[10]   Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications [J].
Chaneliere, C ;
Autran, JL ;
Devine, RAB ;
Balland, B .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1998, 22 (06) :269-322