Low-Power Technique for SRAM-Based On-Chip Arbitrary-Waveform Generator

被引：3

作者：

Song, Taejoong ^{[1
]}

Lee, Sang Min ^{[6
]}

Park, Jongmin ^{[2
]}

Hur, Joonhoi ^{[6
]}

Lee, Michael ^{[6
]}

Kim, Kihong ^{[3
]}

Lee, Chang-Ho ^{[4
]}

Bien, Franklin ^{[5
]}

Lim, Kyutae ^{[6
]}

Laskar, Joy ^{[6
]}

机构：

[1] Samsung Elect Co Ltd, Yongin 449711, South Korea

[2] Qualcomm, San Diego, CA 92121 USA

[3] Samsung Electromech Co Ltd, Suwon 442743, South Korea

[4] Samsung Design Ctr, Atlanta, GA 30308 USA

[5] UNIST, Ulsan 689798, South Korea

[6] Georgia Inst Technol, Sch Elect & Comp Engn, GEDC, Atlanta, GA 30308 USA

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2011年 / 60卷 / 04期

关键词：

Arbitrary-waveform generator (AWG); cognitive radio (CR); matched filter (MF); multiresolution spectrum sensing (MRSS); radar pulse compression; static random-access memory (SRAM); FREQUENCY;

D O I：

10.1109/TIM.2010.2084610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-power technique for a static random-access memory (SRAM)-based on-chip arbitrary-waveform generator (AWG) is proposed for two types of analog-signal-processing applications: multiresolution spectrum sensing and matched filter. The SRAM has an embedded address generator to limit the operation in a sequential-access mode of the AWG. Then, the power consumption of the AWG is analyzed according to the operation modes in multiresolution and multiwaveform spectrum-sensing functions. The low-power technique reduces power by 18% of the SRAM and the address generator and by about 2.2% of the entire AWG at a 1.8-V supply voltage. The AWG is fabricated in a 0.18-mu m CMOS technology and demonstrates a chirp signal and a Daubechies wavelet with a 45-dBc spurious-free dynamic range and a cross-correlation factor of 0.96-0.988 with ideal signals.

引用

页码：1187 / 1196

页数：10

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