Low-Power Technique for SRAM-Based On-Chip Arbitrary-Waveform Generator

被引:3
作者
Song, Taejoong [1 ]
Lee, Sang Min [6 ]
Park, Jongmin [2 ]
Hur, Joonhoi [6 ]
Lee, Michael [6 ]
Kim, Kihong [3 ]
Lee, Chang-Ho [4 ]
Bien, Franklin [5 ]
Lim, Kyutae [6 ]
Laskar, Joy [6 ]
机构
[1] Samsung Elect Co Ltd, Yongin 449711, South Korea
[2] Qualcomm, San Diego, CA 92121 USA
[3] Samsung Electromech Co Ltd, Suwon 442743, South Korea
[4] Samsung Design Ctr, Atlanta, GA 30308 USA
[5] UNIST, Ulsan 689798, South Korea
[6] Georgia Inst Technol, Sch Elect & Comp Engn, GEDC, Atlanta, GA 30308 USA
关键词
Arbitrary-waveform generator (AWG); cognitive radio (CR); matched filter (MF); multiresolution spectrum sensing (MRSS); radar pulse compression; static random-access memory (SRAM); FREQUENCY;
D O I
10.1109/TIM.2010.2084610
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-power technique for a static random-access memory (SRAM)-based on-chip arbitrary-waveform generator (AWG) is proposed for two types of analog-signal-processing applications: multiresolution spectrum sensing and matched filter. The SRAM has an embedded address generator to limit the operation in a sequential-access mode of the AWG. Then, the power consumption of the AWG is analyzed according to the operation modes in multiresolution and multiwaveform spectrum-sensing functions. The low-power technique reduces power by 18% of the SRAM and the address generator and by about 2.2% of the entire AWG at a 1.8-V supply voltage. The AWG is fabricated in a 0.18-mu m CMOS technology and demonstrates a chirp signal and a Daubechies wavelet with a 45-dBc spurious-free dynamic range and a cross-correlation factor of 0.96-0.988 with ideal signals.
引用
收藏
页码:1187 / 1196
页数:10
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