Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

被引：8
|
作者：
Jo, Masafumi [1 ]
Duan, Guotao [1 ]
Mano, Takaaki [1 ]
Sakoda, Kazuaki [1 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
来源：
NANOSCALE RESEARCH LETTERS | 2011年 / 6卷
基金：
日本学术振兴会;
关键词：
MOLECULAR-BEAM EPITAXY; DROPLET EPITAXY; HOLED NANOSTRUCTURES; GAAS; GROWTH; SUBSTRATE; MBE;
D O I：
10.1186/1556-276X-6-76
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study the effects of low-temperature capping (200-450 degrees C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200 degrees C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350 degrees C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200 degrees C-capped sample.
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页数：4
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