Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

被引：8

作者：

Jo, Masafumi ^{[1
]}

Duan, Guotao ^{[1
]}

Mano, Takaaki ^{[1
]}

Sakoda, Kazuaki ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

基金：

日本学术振兴会;

关键词：

MOLECULAR-BEAM EPITAXY; DROPLET EPITAXY; HOLED NANOSTRUCTURES; GAAS; GROWTH; SUBSTRATE; MBE;

D O I：

10.1186/1556-276X-6-76

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We study the effects of low-temperature capping (200-450 degrees C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200 degrees C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350 degrees C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200 degrees C-capped sample.

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页数：4

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