Interface contact and modulated electronic properties by external vertical strains and electric fields in graphene/MoS2 heterostructure

被引：15

作者：

Shi, Jiakuo ^{[1
]}

Chen, Li ^{[1
,2
,4
]}

Yang, Maoyou ^{[1
,4
]}

Mi, Zhishan ^{[3
]}

Zhang, Mingjian ^{[1
]}

Gao, Kefu ^{[2
]}

Zhang, Duo ^{[1
]}

Su, Shuo ^{[1
]}

Hou, Weimin ^{[1
]}

机构：

[1] Qilu Univ Technol, Shandong Acad Sci, Int Sch Photoelect Engn, Jinan 250353, Shandong, Peoples R China

[2] Linyi Univ, Inst Condensed Matter Phys, Linyi 276000, Shandong, Peoples R China

[3] China Iron & Steel Res Inst Grp, Mat Digital R&D Ctr, Beijing 100081, Peoples R China

[4] Qilu Univ Technol, Shandong Acad Sci, Int Sch Photoelect Engn, Jinan 250353, Shandong, Peoples R China

来源：

CURRENT APPLIED PHYSICS | 2022年 / 39卷

关键词：

Graphene/MoS2; heterostructure; First-principles calculations; Strain; External electric field; Schottky barrier; AB-INITIO; STABILITY; MOS2; CDS;

D O I：

10.1016/j.cap.2022.06.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based to the first-principles calculations, we study the electronic properties of graphene/MoS2 heterostructure by modulating the vertical strains and applying external electric field. Graphene/MoS2 heterostructure is a van der Waals heterostructure (vdWH) with the interlayer spacing is 3.2 angstrom for the equilibrium state, and the contact property of the interface is n-type Schottky contact. The Schottky barrier height (SBH) changes with vertical strains which induces a change of charge transfer between graphene and MoS2 layer. In addition, with strain or without strain, the applied positive electric field can effectively promote the charge transfer from graphene to MoS2, while the negative electric field has the opposite effect. These findings support for the design of field effect transistors based on graphene vdWHs.

引用

页码：331 / 338

页数：8

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