Deposition of conductive layer silver and insulating layer Al2O3 for TFT

In this study, we present the results of electroless deposition of silver (Ag) and electrophoretic deposition (EPD) of Al2O3 layers on glass for application in thin film transistor (TFT). Since silver with excellent resistivity is selected to be the material of elcetroless plating. We present a new method to deposit silver conductivity layer of TFT. Firstly, the desired pattern is defined by lithography process. The positive photoresist (AZ-650) is prepared as protective layer to avoid deposition. Then, it is introduced to deposit the seeding layer for adhesion with silver thin film in 200 nanometers. Secondly, the wafer is immersed in the stripping solution to remove resist. Finally, the electroless plating process is carried out. After depositing the silver on glass, microlaminated material is prepared by electrophoretic deposition. Mechanism and kinetics of electrophoretic deposition in an Al2O3 cell are studied linear relations of the deposition yield with voltage applied, time and particle concentration are experimentally verified at both concentration levels (similar to 2.5%) and short deposition time (similar to 10s).