Effect of sulfurization temperature on the phase purity of Cu2SnS3 thin films deposited via high vacuum sulfurization

被引：22
作者：
Pallavolu, Mohan Reddy [1 ]
Reddy, Vasudeva Reddy Minnam [1 ]
Pejjai, Babu [1 ]
Jeong, Dong-seob [1 ]
Park, Chinho [1 ]
机构：
[1] Yeungnam Univ, Sch Chem Engn, Gyongsan 38541, South Korea
来源：
APPLIED SURFACE SCIENCE | 2018年 / 462卷
关键词：
M-CTS thin film; High vacuum sulfurization; Phase purity; Reduction of Sn loss; CU(IN; GA)SE-2; SOLAR-CELLS; IONIC LAYER ADSORPTION; OPTICAL-PROPERTIES; FABRICATION; PRECURSORS; SULFIDES; SYSTEM; GROWTH;
D O I：
10.1016/j.apsusc.2018.08.112
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, the deposition of Cu2SnS3 (CTS) thin films was carried out at different sulfurization temperatures in the range of 350-550 degrees C under high vacuum of 1 Pa using the sputtered Cu/Sn/Cu metal precursor layers in the sulfur vapor atmosphere. In order to reduce the Sn loss, a particular metal stack of Cu/Sn/Cu was used. Single phase monoclinic (M)-CTS thin film was obtained at 500 degrees C. The high intensity Raman modes at 292 cm(-1) and 350 cm(-1) further confirmed the formation of M-CTS. The M-CTS thin film sulfurized at 500 degrees C showed a composition of Cu/Sn = 1.89 and an optical band gap energy of 0.94 eV. Hall effect measurement of the film sulfurized at 500 degrees C with Cu/Sn ratio of 1.82 showed an electrical resistivity of 7.30 Omega-cm, carrier concentration of 6.29 x 10(17) cm(-3), and mobility of 1.36 cm(2) /Vs. Our results indicate that the copper-poor composition with a stacking order of Cu/Sn/Cu is favored in order to attain the single phase M-CTS.
引用
收藏
页码：641 / 648
页数：8
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