Single ion implantation with scanning probe alignment

被引：13

作者：

Persaud, A

Allen, FI

Giccluel, F

Park, SJ

Liddle, JA

Schenkel, T

Ivanov, T

Ivanova, K

Rangelow, IW

Bokor, J

机构：

[1] EO Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[2] Univ Kassel, Fachgebiet Tech Phys, Inst Microstruct Technol & Analyt, D-34132 Kassel, Germany

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 06期

关键词：

D O I：

10.1116/1.1802891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results from our development of a single ion implantation technique integrated with a scanning force microscope. Accurate alignment at the 5 nm level is a crucial requirement for reliable single ion placement. We address this through integration of the ion beam with a scanning probe tip containing an aperture. Single ion registration is based on detection of secondary electron bursts from single, high charge state ions. We describe formation of scanning probe tips with holes and sensing poles by focused ion and electron beam processing (drilling and thin film deposition). Ion transport studies through apertures show stable transmission for >10 h with 1 nA scale beam intensities on precollimators. (C) 2004 American Vacuum Society.

引用

页码：2992 / 2994

页数：3

共 14 条

[1] Progress in silicon-based quantum computing [J].

Clark, RG ;

Brenner, R ;

Buehler, TM ;

Chan, V ;

Curson, NJ ;

Dzurak, AS ;

Gauja, E ;

Goan, HS ;

Greentree, AD ;

Hallam, T ;

Hamilton, AR ;

Hollenberg, LCL ;

Jamieson, DN ;

McCallum, JC ;

Milburn, GJ ;

O'Brien, JL ;

Oberbeck, L ;

Pakes, CI ;

Prawer, SD ;

Reilly, DJ ;

Ruess, FJ ;

Schofield, SR ;

Simmons, MY ;

Stanley, FE ;

Starrett, RP ;

Wellard, C ;

Yang, C .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2003, 361 (1808) :1451-1471

[2] Batch fabricated scanning near field optical microscope/atomic force microscopy microprobe integrated with piezoresistive cantilever beam with highly reproducible focused ion beam micromachined aperture [J].

Grabiec, P ;

Radojewski, J ;

Zaborowski, M ;

Domanski, K ;

Schenkel, T ;

Rangelow, IW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01) :16-21

[3] A silicon-based nuclear spin quantum computer [J].

Kane, BE .

NATURE, 1998, 393 (6681) :133-137

[4]

LI J, 2002, NATURE, V412, P166

[5] Processing issues in top-down approaches to quantum computer development in silicon [J].

Park, SJ ;

Persaud, A ;

Liddle, JA ;

Nilsson, J ;

Bokor, J ;

Schneider, DH ;

Rangelow, IW ;

Schenkel, T .

MICROELECTRONIC ENGINEERING, 2004, 73-4 :695-700

[6] Micromachined atomic force microscopy sensor with integrated piezoresistive, sensor and thermal bimorph actuator for high-speed tapping-mode atomic force microscopy phase-imaging in higher eigenmodes [J].

Pedrak, R ;

Ivanov, T ;

Ivanova, K ;

Gotszalk, T ;

Abedinov, N ;

Rangelow, IW ;

Edinger, K ;

Tomerov, E ;

Schenkel, T ;

Hudek, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06) :3102-3107

[7]

Rangelow IW, 1996, P SOC PHOTO-OPT INS, V2879, P56, DOI 10.1117/12.251232

[8] Open questions in electronic sputtering of solids by slow highly charged ions with respect to applications in single ion implantation [J].

Schenkel, T ;

Rangelow, IW ;

Keller, R ;

Park, SJ ;

Nilsson, J ;

Persaud, A ;

Radmilovic, VR ;

Grabiec, P ;

Schneider, DH ;

Liddle, JA ;

Bokor, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 219 :200-205

[9] Formation of a few nanometer wide holes in membranes with a dual beam focused ion beam system [J].

Schenkel, T ;

Radmilovic, V ;

Stach, EA ;

Park, SJ ;

Persaud, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06) :2720-2723

[10] Solid state quantum computer development in silicon with single ion implantation [J].

Schenkel, T ;

Persaud, A ;

Park, SJ ;

Nilsson, J ;

Bokor, J ;

Liddle, JA ;

Keller, R ;

Schneider, DH ;

Cheng, DW ;

Humphries, DE .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (11) :7017-7024

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