Quantum-confined Sstark effect and intraband transitions in a semiconductor spherical layer

被引：3

作者：

Arutyunyan, VA ^{[1
]}

机构：

[1] State Engn Univ Armeniya, Gyumri Educ Ctr, Gyumri 377503, Armenia

来源：

PHYSICS OF THE SOLID STATE | 2003年 / 45卷 / 07期

关键词：

D O I：

10.1134/1.1594253

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of an external homogeneous electric field on the states of charge carriers in a size-quantized spherical layer is considered. An explicit dependence of the energy shift on the external field strength and the geometric sizes of the sample is obtained, and the electro-optical absorption coefficient for intraband dipole transitions is calculated. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：1342 / 1346

页数：5

共 20 条

[1]

Anselm A.I., 1978, INTRO THEORY SEMICON

[2]

Ekimov A. I., 1989, Soviet Physics - Technical Physics, V34, P371

[3] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

[4]

Gaponenko SV., 1996, FIZ TEKH POLUPROV, V30, P577

[5] QUANTUM CONFINEMENT IN SEMICONDUCTOR HETEROSTRUCTURE NANOMETER-SIZE PARTICLES [J].

HAUS, JW ;

ZHOU, HS ;

HONMA, I ;

KOMIYAMA, H .

PHYSICAL REVIEW B, 1993, 47 (03) :1359-1365

[6]

KIKOIN IK, 1976, TABLES PHYSICAL DATA

[7]

Landau L. D., 1977, COURSE THEORETICAL P, V3

[8] NEW 10 MU-M INFRARED DETECTOR USING INTERSUBBAND ABSORPTION IN RESONANT TUNNELING GAALAS SUPERLATTICES [J].

LEVINE, BF ;

CHOI, KK ;

BETHEA, CG ;

WALKER, J ;

MALIK, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (16) :1092-1094

[9] Structural and spectroscopic investigations of CdS/HgS/CdS quantum-dot quantum wells [J].

Mews, A ;

Kadavanich, AV ;

Banin, U ;

Alivisatos, AP .

PHYSICAL REVIEW B, 1996, 53 (20) :13242-13245

[10] VARIATIONAL CALCULATION ON ELECTRIC-FIELD DEPENDENCE OF ENERGY OF SPHERICAL SEMICONDUCTOR MICROCRYSTALLITES [J].

NOMURA, S ;

KOBAYASHI, T .

SOLID STATE COMMUNICATIONS, 1990, 74 (10) :1153-1158

← 1 2 →