Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared

被引：28
作者：
Luna, E
Hopkinson, M
Ulloa, JM
Guzmán, A
Muñoz, E
机构：
[1] Univ Politecn Madrid, ISOM, E-28040 Madrid, Spain
[2] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, E-28040 Madrid, Spain
[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 15期
关键词：
D O I：
10.1063/1.1618931
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Near-infrared detection is reported for a double-barrier quantum-well infrared photodetector based on a 30-Angstrom GaAs1-yNy (yapproximate to0.01) quantum well. The growth procedure using plasma-assisted molecular-beam epitaxy is described. The as-grown sample exhibits a detection wavelength of 1.64 mum at 25 K. The detection peak strengthens and redshifts to 1.67 mum following rapid thermal annealing at 850 degreesC for 30 s. The detection peak position is consistent with the calculated band structure based on the band-anticrossing model for nitrogen incorporation into GaAs. (C) 2003 American Institute of Physics.
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收藏
页码：3111 / 3113
页数：3
相关论文
共 21 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]  
DABIRAN AM, 1995, J CRYST GROWTH, V150, P23, DOI 10.1016/0022-0248(94)00891-4
[3]   Intersubband transitions in InGaNAs/GaAs quantum wells [J].
Duboz, JY ;
Gupta, JA ;
Byloss, M ;
Aers, GC ;
Liu, HC ;
Wasilewski, ZR .
APPLIED PHYSICS LETTERS, 2002, 81 (10) :1836-1838
[4]   Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75-4.2 μm [J].
Gmachl, C ;
Ng, HM ;
Cho, AY .
APPLIED PHYSICS LETTERS, 2000, 77 (03) :334-336
[5]   Growth and characterization of a bound-to-quasi-continuum QWIP with Al-graded triangular confinement barriers [J].
Guzmán, A ;
Sánchez-Rojas, JL ;
Tijero, JMG ;
Hernando, J ;
Calleja, E ;
Muñoz, E ;
Vergara, G ;
Almazán, R ;
Gómez, LJ ;
Verdú, M ;
Montojo, MT .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) :1650-1652
[6]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF NITROGEN PLASMA INTERACTIONS WITH A GAAS (100) SURFACE [J].
HAUENSTEIN, RJ ;
COLLINS, DA ;
CAI, XP ;
OSTEEN, ML ;
MCGILL, TC .
APPLIED PHYSICS LETTERS, 1995, 66 (21) :2861-2863
[7]   Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy [J].
Hierro, A ;
Ulloa, JM ;
Chauveau, JM ;
Trampert, A ;
Pinault, MA ;
Tournié, E ;
Guzmán, A ;
Sánchez-Rojas, JL ;
Calleja, E .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) :2319-2324
[8]   Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy [J].
Iizuka, N ;
Kaneko, K ;
Suzuki, N .
APPLIED PHYSICS LETTERS, 2002, 81 (10) :1803-1805
[9]   Molecular beam epitaxy of GaNAs and GaInNAs [J].
Kondow, M ;
Kitatani, T .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (08) :746-754
[10]   QUANTUM-WELL INFRARED PHOTODETECTORS [J].
LEVINE, BF .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :R1-R81
123