Study of overheating effects in SiGe-based p-type heterostructures: Methods of the hole temperature determination

The effect of charge carrier overheating is studied in the p-type Si/Si(0.87)Ge(0.13)/Si heterostructure. The hole temperature T(h) can be calculated using three different methods: From a comparison of the changes in the amplitude of the Shubnikov-de Haas oscillations under the influences of temperature and current, from a comparison of the change of phase relaxation time in the weak localization effect obtained at different temperatures and minimum current and at a given temperature but at different values of current, and from a comparison of the temperature and current dependence of the sample resistance. The temperature dependences values of T(h) obtained using three different methods were identical and exhibit transition of the two-dimensional system under study from the regime of "partial inelasticity" to that of small angle scattering at temperature lowering.