Memristive Combinational and Sequential Logic for In-memory Computing

被引:0
作者
Huang, Xiaodi [1 ]
Yang, Ling [1 ]
Li, Yi [1 ]
Miao, Xiangshui [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
来源
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年
基金
中国国家自然科学基金;
关键词
Memristor; in-memory computing; combinational logic; sequential logic; OPERATIONS;
D O I
10.1109/EDTM50988.2021.9420832
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, memristive combinational logic and sequential logic are designed and experimentally demonstrated with low hardware and latency overheads. By utilizing four logic variables: the two terminal voltages, the resistance state of the bipolar memristors, and a direction variable, the implementation of memristive combinational and sequential logic functions can share the same circuit structure and operation method. Our study provides a feasible approach towards a memristive processor for unconventional in-memory computing.
引用
收藏
页数:3
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