Electron-Electron Interaction and Spin-Orbit Coupling in InAs/AlSb Heterostructures with a Two-Dimensional Electron Gas

被引:20
作者
Gavrilenko, V. I. [1 ]
Krishtopenko, S. S. [1 ]
Goiran, M. [2 ]
机构
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[2] Lab Natl Champs Magnet Intenses, F-31400 Toulouse, France
基金
俄罗斯基础研究基金会;
关键词
INAS QUANTUM-WELLS; INVERSION ASYMMETRY; PERSISTENT PHOTOCONDUCTIVITY; BAND-STRUCTURE; LAYERS; ENHANCEMENT; SUBBAND; DONORS; ALSB;
D O I
10.1134/S1063782611010088
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The effect of electron-electron interaction on the spectrum of two-dimensional electron states in InAs/AlSb (001) heterostructures with a GaSb cap layer with one filled size-quantization subband. The energy spectrum of two-dimensional electrons is calculated in the Hartree and Hartree-Fock approximations. It is shown that the exchange interaction decreasing the electron energy in subbands increases the energy gap between subbands and the spin-orbit splitting of the spectrum in the entire region of electron concentrations, at which only the lower size-quantization band is filled. The nonlinear dependence of the Rashba splitting constant at the Fermi wave vector on the concentration of two-dimensional electrons is demonstrated.
引用
收藏
页码:110 / 117
页数:8
相关论文
共 36 条
[31]   TAMM STATES AND DONORS AT INAS/ALSB INTERFACES [J].
SHEN, J ;
GORONKIN, H ;
DOW, JD ;
REN, SY .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) :1576-1581
[32]   ELECTRON CONCENTRATIONS AND MOBILITIES IN ALSB/INAS/ALSB QUANTUM WELLS [J].
TUTTLE, G ;
KROEMER, H ;
ENGLISH, JH .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :5239-5242
[33]   EFFECTS OF INTERFACE LAYER SEQUENCING ON THE TRANSPORT-PROPERTIES OF INAS/ALSB QUANTUM-WELLS - EVIDENCE FOR ANTISITE DONORS AT THE INAS/ALSB INTERFACE [J].
TUTTLE, G ;
KROEMER, H ;
ENGLISH, JH .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (06) :3032-3037
[34]   Spin splitting of subband energies due to inversion asymmetry in semiconductor heterostructures [J].
Zawadzki, W ;
Pfeffer, P .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (01) :R1-R17
[35]   Effective g factor of n-type HgTe/Hg1-xCdxTe single quantum wells -: art. no. 115340 [J].
Zhang, XC ;
Ortner, K ;
Pfeuffer-Jeschke, A ;
Becker, CR ;
Landwehr, G .
PHYSICAL REVIEW B, 2004, 69 (11)
[36]   Rashba splitting in n-type modulation-doped HgTe quantum wells with an inverted band structure -: art. no. 245305 [J].
Zhang, XC ;
Pfeuffer-Jeschke, A ;
Ortner, K ;
Hock, V ;
Buhmann, H ;
Becker, CR ;
Landwehr, G .
PHYSICAL REVIEW B, 2001, 63 (24)