Dynamic observation of in adsorption on Si(111) surfaces by UHV high-temperature scanning tunneling microscopy

被引：27

作者：

Tanishiro, Y ^{[1
]}

Kaneko, K ^{[1
]}

Minoda, H ^{[1
]}

Yagi, K ^{[1
]}

Sueyoshi, T ^{[1
]}

Sato, T ^{[1
]}

Iwatsuki, M ^{[1
]}

机构：

[1] JEOL LTD, AKISHIMA, TOKYO 196, JAPAN

来源：

SURFACE SCIENCE | 1996年 / 357卷 / 1-3期

关键词：

adsorption; indium; scanning tunneling microscopy; silicon; single crystal surfaces; surface structure; morphology; roughness; and topography;

D O I：

10.1016/0039-6028(96)00189-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium adsorption and desorption processes on Si(lll) surfaces were observed in situ by UHV high-temperature STM. By the deposition of In on the Si(111)7 x 7 surfaces at 380 degrees C, the surface structure changed successively to root 3 x root 3, root 31 x root 31 and 4 x 1. The number densities of silicon atoms in the restructuring layers for the root 3 x root 3, root 31 x root 31, and 4 x 1 structures were evaluated to be about 0, 1 and 2 ML, respectively. High-resolution STM images were also taken after the deposition.

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收藏

页码：407 / 413

页数：7

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