The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source

被引：6

作者：

Chen, Qimiao ^{[1
]}

Zhang, Lin ^{[1
]}

Zhou, Hao ^{[1
]}

Li, Wei ^{[1
]}

Son, Bong Kwon ^{[1
]}

Tan, Chuan Seng ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2020年 / 35卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

mid-IR light source; band offset; GeSn quantum dot; GE; SI;

D O I：

10.1088/1361-6641/ab5d89

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A direct band gap type-I Ge0.75Sn0.25/Ge0.682Sn0.158Si0.16 QD heterostructure is proposed for mid-IR light sources. The effects of strain and composition are theoretically investigated to optimize the band offset of the direct band gap GeSn QDs. It is found that the introduction of tensile strain and Si incorporation in the barrier layers are effective to increase the band offset in the conduction band. Besides, the band offset is expected to increase with the increase of Sn composition in QDs and the size of QDs.

引用

页数：8

共 49 条

[1] Low-threshold optically pumped lasing in highly strained germanium nanowires [J].

Bao, Shuyu ;

Kim, Daeik ;

Onwukaeme, Chibuzo ;

Gupta, Shashank ;

Saraswat, Krishna ;

Lee, Kwang Hong ;

Kim, Yeji ;

Min, Dabin ;

Jung, Yongduck ;

Qiu, Haodong ;

Wang, Hong ;

Fitzgerald, Eugene A. ;

Tan, Chuan Seng ;

Nam, Donguk .

NATURE COMMUNICATIONS, 2017, 8

[2] Si/Ge nanostructures [J].

Brunner, K .

REPORTS ON PROGRESS IN PHYSICS, 2002, 65 (01) :27-72

[3] An electrically pumped germanium laser [J].

Camacho-Aguilera, Rodolfo E. ;

Cai, Yan ;

Patel, Neil ;

Bessette, Jonathan T. ;

Romagnoli, Marco ;

Kimerling, Lionel C. ;

Michel, Jurgen .

OPTICS EXPRESS, 2012, 20 (10) :11316-11320

[4] Strain-Balanced GezSn1-z-SixGeySn1-x-y Multiple-Quantum-Well Lasers [J].

Chang, Guo-En ;

Chang, Shu-Wei ;

Chuang, Shun Lien .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (12) :1813-1820

[5] A new route toward light emission from Ge: tensile-strained quantum dots [J].

Chen, Qimiao ;

Song, Yuxin ;

Wang, Kai ;

Yue, Li ;

Lu, Pengfei ;

Li, Yaoyao ;

Gong, Qian ;

Wang, Shumin .

NANOSCALE, 2015, 7 (19) :8725-8730

[6]

Chen SM, 2016, NAT PHOTONICS, V10, P307, DOI [10.1038/nphoton.2016.21, 10.1038/NPHOTON.2016.21]

[7] Electronic structure of SnxGe1-x alloys for small Sn compositions: Unusual structural and electronic properties [J].

Chibane, Y. ;

Ferhat, M. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)

[8]

Chuang S.L, 2012, PHYS PHOTONIC DEVICE

[9] Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys [J].

D'Costa, V. R. ;

Fang, Y. -Y. ;

Tolle, J. ;

Kouvetakis, J. ;

Menendez, J. .

PHYSICAL REVIEW LETTERS, 2009, 102 (10)

[10] Transferability of optical bowing parameters between binary and ternary group-IV alloys [J].

D'Costa, Vijay R. ;

Cook, Candi S. ;

Menendez, Jose ;

Tolle, John ;

Kouvetakis, John ;

Zollner, Stefan .

SOLID STATE COMMUNICATIONS, 2006, 138 (06) :309-313

← 1 2 3 4 5 →