A General Design Strategy for Block Copolymer Directed Self-Assembly Patterning of Integrated Circuits Contact Holes using an Alphabet Approach

被引：37

作者：

Yi, He ^{[1
]}

Bao, Xin-Yu ^{[1
]}

Tiberio, Richard ^{[1
]}

Wong, H. -S. Philip ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

NANO LETTERS | 2015年 / 15卷 / 02期

基金：

美国国家科学基金会;

关键词：

Block copolymer; directed self-assembly; contact hole patterning; alphabet approach; design strategy; LITHOGRAPHY; GRAPHOEPITAXY; DEVICE;

D O I：

10.1021/nl502172m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Directed self-assembly (DSA) is a promising lithography candidate for technology nodes beyond 14 nm. Researchers have shown contact hole patterning for random logic circuits using DSA with small physical templates. This paper introduces an alphabet approach that uses a minimal set of small physical templates to pattern all contacts configurations on integrated circuits. We illustrate, through experiments, a general and scalable template design strategy that links the DSA material properties to the technology node requirements.

引用

页码：805 / 812

页数：8