Modeling of Temperature Effects in a Surface-Potential Based ASM-HEMT model

被引：0

作者：

Ghosh, S. ^{[1
]}

Sharma, K. ^{[1
]}

Agnihotri, S. ^{[1
]}

Chauhan, Y. S. ^{[1
]}

Khandelwal, S. ^{[2
]}

Fjeldly, T. A. ^{[3
]}

Yigletu, F. M. ^{[4
]}

Iniguez, B. ^{[4
]}

机构：

[1] IIT Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India

[2] UCB, Dept EECS, Berkeley, CA 94720 USA

[3] NTNU, Dept Elect & Telecommun, N-7034 Trondheim, Norway

[4] URV, Dept Elect Elect & Automat Engn, Tarragona 43007, Spain

来源：

2014 IEEE 2ND INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE) | 2014年

关键词：

Temperature effects; compact model; AlGaN/GaN HEMTs; ALGAN/GAN HEMTS; DEVICES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Here, we present the modeling of temperature effects in the surface potential based "Advanced Spice Model for High Electron Mobility Transistor" (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model is compared with measured data and shows excellent fitting for a wide range of temperature.

引用

页数：4

共 15 条

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